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Thermal and Small-Signal Characterisation of GaAs and GaN Pseudomorphic High Electron Mobility Transistors (pHEMTs)
[Thesis]. Manchester, UK: The University of Manchester; 2012.
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Abstract
Development of linear temperature dependent small signal models for active devices is useful for circuit designers to predict the circuit performance incorporating the devices. It is especially the case for high power devices where tremendous heat is expected to be generated and the underlying physics of the device could be affected. In this thesis, a comparison of thermal and small-signal characteristics of AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) and AlGaN/InGaN pHEMTs have been analysed and modelled for the first time. A comprehensively developed small-signal parameter extraction procedure has been used which automatically determines the device small-signal parameters directly from the measured S-parameters. An automated direct equivalent circuit parameters (ECPs) extraction, covering temperature range from -40 to 150C, was carried out on the two types of transistors. Analyses of both sets of the extracted ECPs provide some valuable insights to the governing physics of the transistors which can be helpful for future designs and optimizations for advanced monolithic microwave integrated circuits (MMICs) such as multilayer 3D MMICs.
Keyword(s)
GaAs and GaN HEMTs, linear temperature dependent small signal models,; equivalent circuit parameters (ECPs) extraction, Temperature coefficients (TCs) for equivalent circuit parameters (ECPs)