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Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Britnell, L; Gorbachev, R V; Jalil, R; Belle, B D; Schedin, F; Katsnelson, M I; Eaves, L; Morozov, S V; Mayorov, A S; Peres, N M R; Neto, A H C; Leist, J; Geim, A K; Ponomarenko, L A; Novoselov, K S
Nano Letters. 2012;12(3):1707-1710.
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Abstract
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
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boron nitride; conductive afm; electron tunneling; graphene; graphene heterostructures; ultrathin
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