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Domain wall propagation on nanometer scale: Coercivity of a single pinning center

Novoselov, K S; Geim, A K; van der Berg, D; Dubonos, S V; Maan, J K

Ieee Transactions on Magnetics. 2002;38(5):2583-2585.

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Abstract

Nanometer-scale movements of domain walls in uniaxial garnet films have been studied by means of micromagnetization measurements using miniature gold and semiconductor Hall probes. The high spatial resolution is achieved due to low intrinsic noise of semiconductor ballistic Hall microprobes. At low (helium) temperatures, the domain walls are found to move by discrete jumps, which we attribute to pinning on isolated defects, and we were able to measure local hysteresis loops associated with pinning on individual pinning centers. The temperature dependence of the coercive field of a single pinning center allowed us to evaluate the characteristic energy and characteristic volume of the pinning center. At higher temperatures, the character of domain wall propagation changed, and walls were found to move not only by jumps between pinning centers but also via elastic bending.

Bibliographic metadata

Type of resource:
Content type:
Published date:
Language:
english
Alternative journal title:
Ieee T Magn
ISSN:
Volume:
38
Issue:
5
Start page:
2583
End page:
2585
Total:
3
Pagination:
2583-2585
Digital Object Identifier:
Doi 10.1109/Tmag.2002.801959
ISI Accession Number:
ISI:000178867200227
Related website(s):
  • Related website <Go to ISI>://000178867200227
General notes:
  • Part 1 608VE Times Cited:11 Cited References Count:15
Access state:
Active

Institutional metadata

University researcher(s):

Record metadata

Manchester eScholar ID:
uk-ac-man-scw:192566
Created by:
Hawthornthwaite, Sabina
Created:
19th April, 2013, 14:55:52
Last modified by:
Hawthornthwaite, Sabina
Last modified:
19th April, 2013, 14:55:52

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