Related resources
Full-text held externally
Search for item elsewhere
University researcher(s)
Academic department(s)
Magneto-optical study of correlated electron-hole layers in single-barrier heterostructures
Parlangeli, A; Christianen, P C M; Geim, A K; Maan, J C; Eaves, L; Henini, M
Physica Status Solidi a-Applied Research. 1997;164(1):587-590.
Access to files
Full-text and supplementary files are not available from Manchester eScholar. Full-text is available externally using the following links:
Full-text held externally
Abstract
We report the low-temperature photoluminescence investigation of a single-barrier GaAs/AlAs/ GaAs p-i-n heterostructure with applied magnetic fields of up to 17 T. Under conditions of forward bias, electrons and holes accumulate at opposite sides of the barrier to form two coupled 2D layers of tunable density. We observe an onset of polarized recombination peaks originating from these layers when the filling factor is immediately lower than two. From the properties of the onset and the shift of the peaks with applied voltage we conclude that we have to take into account the Coulomb interaction between the layers to describe properly the physical situation of the system and we propose the picture of a correlated ground state to explain the experimental findings.
Bibliographic metadata
- Related website <Go to ISI>://000071319400115
- Yp830 Times Cited:7 Cited References Count:10