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Giant Temperature Resonances of Noise in Submicron Quantum-Well Structures
Stoddart, S T; Geim, A K; Bending, S J; Harris, J J; Peck, A J; Ploog, K
Solid-State Electronics. 1994;37(4-6):1011-1014.
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Abstract
We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs.
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- Related website <Go to ISI>://A1994NE79600111
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