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Shallow Acceptor Population and Free Hole Concentration in Si-in and Si-Ga with Ir-Photoexcitation
Applied Physics a-Materials Science & Processing. 1982;27(2):71-78.
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Bibliographic metadata
Type of resource:
Content type:
Published date:
Article title:
Language:
english
Journal title:
Alternative journal title:
Appl Phys a-Mater
ISSN:
Volume:
27
Issue:
2
Start page:
71
End page:
78
Total:
8
Pagination:
71-78
ISI Accession Number:
ISI:A1982NA51600001
Related website(s):
- Related website <Go to ISI>://A1982NA51600001
General notes:
- Na516 Times Cited:18 Cited References Count:21
Access state:
Active
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University researcher(s):
Academic department(s):
Record metadata
Manchester eScholar ID:
uk-ac-man-scw:192665
Created by:
Hawthornthwaite, Sabina
Created:
19th April, 2013, 15:06:41
Last modified by:
Hawthornthwaite, Sabina
Last modified:
19th April, 2013, 15:06:41