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- DOI: 10.1063/1.4818794
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University researcher(s)
Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
J. Pal, M. A. Migliorato, C.-K. Li, Y.-R. Wu, B. G. Crutchley , I. P. Marko, s. J. Sweeney
Journal of Applied Physics. 2013;114(7):073104 .
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Accepted
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Volume:
114
Issue:
7
Start page:
073104
Total:
5
Digital Object Identifier:
10.1063/1.4818794
Attached files embargo period:
Immediate release
Attached files release date:
14th August, 2014
Access state:
Active
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Manchester eScholar ID:
uk-ac-man-scw:205806
Created by:
Migliorato, Max
Created:
28th August, 2013, 12:44:25
Last modified by:
Abdelrehim Abdelkerim, Omar
Last modified:
27th November, 2015, 15:22:41