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Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
J. Pal, M. A. Migliorato, C.-K. Li, Y.-R. Wu, B. G. Crutchley, I. P. Marko, and S. J. Sweeney
Journal of Applied Physics. 2013;114(7):073104.
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Abstract
We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region.