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DOI: 10.1109/EDMO.2002.1174959

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Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on;2002.

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Full-text held externally

DOI: 10.1109/EDMO.2002.1174959

Abstract

RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.