Prof Aimin Song - personal details
Role: Professor of Nanoelectronics
Tel: 0161 306-4762
Sackville Street Building-D3B
School of Electrical and Electronic Engineering
The University of Manchester
Professor Aimin Song received PhD degree from the Chinese Academy of Sciences in 1995. After three years of fellowships at University of Glasgow and University of Munich by the Royal Society and Alexander von Humboldt foundation, he worked at the Nanometre Consortium, Lund University as a Guest Lecturer before moving to Manchester as a Lecturer in 2002. He became Professor of Nanoelectronics in 2006. His research is focused on novel nanoelectronic devices which, apart from memory and sensing applications, are mainly for a) ultra high speed (at THz or 1000s GHz frequencies) nanoelectronics based on conventional semiconductors such as silicon/GaAs, and b) printable electronics based on low-cost semiconductors such as conductive polymers and metal oxides. His current research areas include New nano-electronic device/circuit concepts, Printable electronics, and energy harvesting based on nano-antennas and ultra-fast THz zero-threshold diodes. His work on novel nanoelectronic devices has led to awards including "Researcher of the Year" medal of the University of Manchester, Royal Society Brian Mercer Feasibility Award, and a number of best conference paper awards. The potentials of practical applications of the nanodevices for printable electronics and energy harvesting have motivated a number of commercialization activities including around 10 patents/patent applications and a spin-out company.
The novel electronic nanodevices that his team developed are very simple, because of which they are advantageous in, for instance, manufacturability and high-speed operations. Whereas only experts can explain the working principle of a conventional pn diode, a layman can understand the basis how this "nano-diode" operates (Click HERE). In fact, this nano rectifier is one of the first novel, manufacturable nanoelectronic devices that have been demonstrated to work at room temperature. Another new device concept is even simpler (Click HERE). We have recently demonstrated that this device functions even at THz (1,000GHz) frequencies. These ultra-fast, zero-threshold diodes may be used in future generation of large-volume information processing and high-performance computations. The devices are fabricated by our nanolithography tools, which allow us to achieve sub-100nm and even 30 nm features.