Prof Matthew Halsall - publications

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• Bronislovas Čechavičiusa, Julius Kavaliauskasa, Genė Krivaitėa, Dalius Seliutaa, Gintaras Valušisa, Matthew P. Halsall, Matthew J. Steer, Paul Harrison. Photoreflectance and differential surface photovoltage studies of δ-doped GaAs/AlAs multiple quantum wells. Proc. SPIE. 5946: 258-265. eScholarID:140955
• H. Jayatilleka, M.Wojdak, A.J. Kenyon, C.R. Mokry, P.J. Simpson, A.P. Knights, I. Crowe, M.P. Halsall. Probing energy transfer in an ensemble of silicon nanocrystals. Phys Rev B. In-press eScholarID:140911
• Iain F. Crowe , Matthew P. Halsall, Oksana Hulko, Andrew P. Knights,Russell M. Gwilliam, Maciej Wojdak and Anthony J. Kenyon. Probing the phonon confinement in ultra-small silicon nano-crystals reveals a size dependent surface energy. Journal of applied physics. In-press eScholarID:140906

2011

• Iain F. Crowe, Matthew P. Halsall, Oksana Hulko, Andrew P. Knights, Russell M. Gwilliam, Maciej Wojdak, and Anthony J. Kenyon. Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy. Journal of Applied Physics. 2011 April; 109(8): 8. eScholarID:142670 | DOI:10.1063/1.3575181

2010

• I.F.Crowe, Oksana Hulkom Nicholas P Hylton, Matthewe.P. Halsall, Andrew.P.Knights, Simon Ruffell and R.M. Gwilliam. Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processing. Proc. SPIE 7606. 2010; 76061K: eScholarID:140912 | DOI:doi:10.1117/12.852924
• M P Halsall, I F Crowe, N P Hylton, O Hulko, R Jalili-Kashtiban, U Bangert, A P Knights and R M Gwilliam. Novel processing for Si-nanocrystal based photonic materials. ECS Trans. 2010; 28(3): eScholarID:140910 | DOI:10.1149/1.3367207
• N. P. Hylton, I. F. Crowe, A. P. Knights, M. P. Halsall, S. Ruffell, and R. M. Gwilliam. Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2. Proc. SPIE 7606. 2010; 760604: eScholarID:140913 | DOI:10.1117/12.852922
• J.Pooley, A.M.Gilbertson, P.D.Buckle, R.S.Hall, M.T. Fearn, M.P.Halsall L.F.Cohen, and T.Ashley. Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1-xSb heterostructures. Semi. Sci. Tech. 2010; 25(12): eScholarID:140905 | DOI:10.1088/0268-1242/25/12/125005
• D.Seliuta, B.Čechavičius, J.Kavaliauskas, S.Balakauskas, G.Valušis, B. Sherliker, M.P.Halsall, M.Lachab, S.P.Khanna, P.Harrison and H. E.Linfield. Terahertz Sensing Based on Impurity Transitions in delta-doped GaAs/AlAs Multiple Quantum Wells. PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. 2010; 1199: 183-184. eScholarID:140916 | DOI:doi:10.1063/1.3295358

2009

• T.Roschuk, P.Wilson, J.Li, K.Dunn, J.Wojcik, I.F.Crowe, R.Gwilliam, M.P.Halsall, A.P.Knights, and P. Mascher. Structure and Luminescence of Rare Earth-doped Silicon Oxides Studied Through XANES and XEOL. ECS Trans. 2009; 25(213): eScholarID:140917 | DOI:10.1002/pssb.200945531

2008

• D.F.Logan, P.E.Jessop, A.P.Knights, R.M.Gwilliam and M.P.Halsall. The Effect of Doping Type and Concentration on Optical Absorption via Implantation Induced Defects in Silicon-on-Insulator Waveguides. Commad: 2008 Conference On Optoelectronic And Microelectronic Materials & Devices. 2008; 152-155. eScholarID:140918 | DOI:10.1109/COMMAD.2008.4802114

2007

• J.E.Proctor, and M.P.Halsall. High pressure studies of the effects of solvents on single walled carbon nanotubes. Physica status solidi B-basic solid state physics. 2007; 244(1): 336-341. eScholarID:140919

2005

• Kundrotas, J; Cerskus, A; Asmontas, S; Valusis, G; Sherliker, B; Halsall, MP; Steer, MJ; Johannessen, E; Harrison, P. Excitonic and impurity-related optical transitions in Be delta-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach. PHYSICAL REVIEW B. 2005 December; 72: eScholarID:1a12504

2004

• M.P.Halsall1, A.D.F.Dunbar, H.Omi, T.Ogino, Y.Shiraki, M.Miura and J.-P.R. Wells. Confinement and dynamics of hole states localised in Ge quantum dots grown on Si. J. Luminescence. 2004 June; 108(1-4): 329-332. eScholarID:140988
• W. M. Zheng, M. P. Halsall and P. Harmer, P.Harrison and M. J. Steer. Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple quantum wells. Appl. Phys. Lett. 2004; 84: 735-737. eScholarID:140958
• P. Harmer, M. P. Halsall, D. Wolverson, P. J. Parbrook and S. J. Henley. Pressure dependent photoluminescence study of epitaxial AlGaN to 18 GPa. Semicond. Sci. Technol. 2004; 19(3): L22-L24. eScholarID:140959
• M.P.Halsall, P.Harmer P.J.Parbrook, and S.Hennerley. Raman study of the high-pressure wurtzite to Rocksalt phase transition of GaN. Phys. Rev. B. 69. 2004; 235207: 4. eScholarID:140960

2003

• W. M. Zheng, M. P. Halsall, P.Harrison, J.P.R.Wells, I.V.Bradley and M. J. Steer. Effect of quantum well confinement on acceptor state lifetime in delta-doped GaAs/AlAs multiple quantum wells. Appl. Phys. Lett. 2003; 83: 3719-3721. eScholarID:140992
• M.P.Halsall, B.Sherliker, P.Harrison , V.D.Jovanović, D.Indjin, Z.Ikonić,T.Wang, M.A.Whitehead, P.J.Parbrook. Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells. phys. stat. sol. (c) 0. 2003; 7: 1-4. eScholarID:141000
• F. Volpi, A.R. Peaker, I.D. Hawkins, M.P. Halsall, P.B. Kenway, A. Portavoce, A. Ronda, I. Berbezier. Hole trapping in self-assembled SiGe quantum nanostructures. Materials Science and Engineering B. 2003; 101: 338-344. eScholarID:140996
• M.P.Halsall, P.Harmer, P.J.Parbrook1,T.Wang,J-P.R.Wells. Photoluminescence spectroscopy of InGaN quantum dots grown at low surface densities by MOVPE. phys. stat. sol. (c) 0. 2003; 4. eScholarID:141001 | DOI:10.1002/pssc.200303525
• W. M. Zheng, M. P. Halsall, P.Harrison, J.Wells, I.V.Bradley and M. J. Steer. Picosecond time-resolved studies of excited state lifetimes of Be acceptor in GaAs/AlAs multiple quantum wells. Phys. Stat. Sol. (b). 2003; 235(1): 54-57. eScholarID:140993
• P. Harrison M. P. Halsall, W.-M. Zheng and J.-P. R.Wells I. V. Bradley and M. J. Steer. Quantum-confined impurities as single-atom quantum dots:Application to Terahertz emitters. Physics, Chemistry and Applications of Nanostructures. 2003; 533-540. eScholarID:140994
• J. Sandler, M.. Shaffer, A.H. Windle, M.P. Halsall, M.A. Montes-Morán, C.A. Cooper and R.J.Young. Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: a simple geometric effect. Phys. Rev. B. 67. 2003; 03541740: 8. eScholarID:140991

2002

• M.P.Halsall, H.Omi, T.Ogino. Optical Properties of self assembled Ge wires grown on Si (113). Appl. Phys. Lett. 2002; 81(13): 2448-2450. eScholarID:141002
• W. M. Zheng, M. P. Halsall and P. Harmer, P.Harrison and M. J. Steer. The acceptor binding energy in d-doped GaAs/AlAs multiple-quantum wells. J. Appl. Phys. 2002; 92(10): 6039-6042. eScholarID:141003

2001

• M.P.Halsall, V.V.Tishchenko, A.V. Kovalenko, J.E.Nicholls, P.Lilley. Characterization of ZnS/ZnSe Quantum Wells Crown by Photoassisted Vapour Phase Epitaxy. Ukrains'kyi Fizychnyi Zhurnal. 2001; 46(8): 865-869. eScholarID:141004
• A.Dunbar, M.P.Halsall, P.Dawson, U.Bangert, Y.Shiraki. Effect of strain seeding of Ge dot growth on Si(001). Appl. Phys. Lett. 2001; 78: 1658-1660. eScholarID:141141
• C.A.Cooper, R.J.Young and M.P.Halsall. Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopy. Composites A: Applied Science and Manufacturing. 2001; 32: 401-411. eScholarID:141140
• M.P.Halsall, P.Harrison, J.-P.R. Wells, I.V.Bradley and H.Pellemans. Picosecond Far-Infrared studies of intra-acceptor dynamics in bulk GaAs and d-doped AlAs/GaAs quantum wells. Phys. Rev. B. 2001; 63(15): 4. eScholarID:141142
• P.Harrison and M.P.Halsall. Quantum Impurities as Quantum dots. Proc. Ultrafast Phenomena in Semiconductors 2001. 2001; 384-385: 165-172. eScholarID:141137
• A.Dunbar, , P.Dawson, M.P.Halsall, U.Bangert, Y.Shiraki. Strain seeding of Ge quantum Dots grown on Si. Phys. Stat. Sol. (b). 2001; 224(1): 257-260. eScholarID:141135
• A.Dunbar, M.P.Halsall, P.Dawson, U.Bangert, Y.Shiraki, M.Miura, I.Berbezier, B.A.Joyce and J.Zhang. Structural, compositional and optical properties of self organized Ge quantum dots. Phys. Stat. Sol. (b). 2001; 224(1): 265-269. eScholarID:141006
• A.D.F.Dunbar, M.P.Halsall, U.Bangert, A.Harvey , P.Dawson, B.A.Joyce, J.Zhang. I.Berbezier. Studies of compositional variations in germanium quantum dots grown on silicon. Mat. Res. Symp. Proc. 2001; 638: 4. eScholarID:141134

2000

• M.P.Halsall, P.Harrison, H.Pellemans, C.R.Pidgeon. Free-electron laser studies of intra-acceptor transitions in GaAs :a potential far- infrared emission system. TeraHertz Spectroscopy and applications II’ J.Martyn Chamberlain, Proceedings of SPIE. 2000; 3828: 171-175. eScholarID:141144

1999

• M.P.Halsall, A.D.F.Dunbar and U.Bangert. Effect of 0ff-[100] axis substrate orientation on ordering in the AlGaInP system grown by MOVPE. J. Appl. Phys. 1999; 85(1): 199-203. eScholarID:141146

1998

• V.V.Tischenko, N.V.Bondar, A.V.Kovalenko, M.P.Halsall and P.Lilley. Localized excitionic states in ZnS-ZnSe single quantum wells. Superl. and Micro. 1998; 24(2): 143-147. eScholarID:141147

1997

• A.Dunbar, S Hall. M Halsall, U Bangert. Investigations of ordering in AlGaInP. Inst. Phys. Conf. Ser. No 157. 1997; (157): 257-261. eScholarID:141150
• P.Dawson, P.Buckle, M.J.Godfrey, W.H.Roepke and M.Halsall. Observation of resonant exciton cooling in GaAs/AlGaAs Quantum well structures. Solid State Comm. 1997; 101: 477-482. eScholarID:141153
• M.P.Halsall and P.Dawson. Raman Spectra and lattice dynamics of intermixed AlAs/GaAs superlattices. J. Appl. Phys. 1997; 81: 224-230. eScholarID:141152

1996

• K.Harada, B.Lou,Y.Makita ,A.Beye, M.P.Halsall, S.Kimura,N.Kobayashi,T.lida, T.Shima,H.Shibata,A.Obara. High-Energy Ion-implantation of a moderately deep Acceptor Hg into liquid encapsulated Czochralski grown GaAs:Formation of new shallow emission bands. Mat. Res. Soc. Symp. Proc. 1996; 396: 835-840. eScholarID:141154

1995

• K.Harada, B.Lou, Y.Makita, A.Beye, M.P.Halsall ,S.Kimura,N.Kobayashi,T.lida, T.Shima,H.Shibata,A.Obara. High-Energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method:Formation of multiple shallow emissions. Appl. Phys. Lett. 1995; 67(19): 2845-2848. eScholarID:141156
• D.Wolverson, S.V.Railson, M.P.Halsall, J.J.Davies, B.Lunn and D.E.Ashenford. Selective excitation of spin-flip Raman scattering from electrons bound to donors in CdTe/CdMnTe semiconductor quantum well structures. Semiconductor Science and Technology. 1995; 10: 1475-1480. eScholarID:141155

1994

• M.P.Halsall, S.V.Railson, D.Wolverson, J.J.Davies, B.Lunn and D.E.Ashenford. Spin Flip Raman Scattering from uniformly distributed residual donors in CdTe/CdMnTe Superlattices. Phys. Rev. B. 1994; 50: . eScholarID:141157
• D Wolverson, JJ Davies, SV Railson, M.P.Halsall, D.E.Ashenford and B.Lunn. Spin-flip scattering by electrons bound to donors in CdTe/Cd1-xMnxTe multiple quantum well structures as a function of barrier composition. J. Crystal Growth. 1994; 138: 656-660. eScholarID:141158

1993

• D.J.Dunstan, R.H.Dixon, P.Kidd, L.K.Howard, V.A.Wilkinson, J.D.Lambkin, C.Jeynes, M.P.Halsall, D.Lancefield, M.T.Emeny, P.J.Goodhew, K.P. Homewood, B.J.Sealy and A.R.Adams. Growth and characterisation of relaxed epilayers of InGaAs on GaAs. J. Cryst. Growth. 1993; 126: 589-600. eScholarID:141159
• M.P.Halsall, D.Wolverson and J.J.Davies. Spin flip Raman scattering from electrons bound to donors in both wells and barriers of CdTe/Cd0.93M 0.07Te multiple quantum well structures. Solid State Comm. 1993; 86: 15-18. eScholarID:141160
• W.Grieshaber, M.Halsall, A.Wasiela, Y.Merle d'Aubigné, C.Bodin, J.Cibert and G.Feuillet. Two dimensional excitonic magnetic polaron in CdxMn1-x Te/CdyMn1-yTe quantum wells. Journal de Physique IV. 1993; 3(C5): 75-78. eScholarID:141161

1992

• Dhese K, Nicholls JE, Goodwin J, Hagston WE, Davies JJ, Halsall MP, Cockayne B, Wright PJ. Atmospheric-pressure metalorganic chemical vapor-deposition growth and optical studies of znse1-xtex thin-film alloys. J. Crystal Growth. 1992 February; 117(1-4): 91-95. eScholarID:141163
• M.P.Halsall, J.J.Davies, J.E.Nicholls, P.J.Wright and B.Cockayne. CdS/CdSe Intrinsic Stark Superlattices. J. Appl. Phys. 1992; 71(2): 907-915. eScholarID:141167
• M.P.Halsall, D.Wolverson, J.J.Davies, B.Lunn and D.E.Ashenford. Ga2Te3 and Tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman Scattering. Appl. Phys. Lett. 1992; 60: 2129-2131. eScholarID:141164
• M.P.Halsall, P.J.Boyce, D.Wolverson and J.J.Davies. Resonant electron spin-flip raman scattering in Zn1-xMnxTe. Solid State Comm. 1992; 83: 85-88. eScholarID:141165

1991

• D.Wolverson, M.P.Halsall and J.J.Davies. Energy band structure of CdS/CdSe intrinsic stark superlattices. Semicond. Sci. Technol. 1991; 6: A123-A126. eScholarID:141168
• M.P.Halsall, J.J.Davies, J.E.Nicholls, B.Cockayne and P.J.Wright. Photoluminescence of CdS/CdSe wurtzite superlattices, evidence for type II behaviour modified by piezoelectric fields. J. Luminescence. 1991; 48: 735-739. eScholarID:141169
• P.J.Parbrook, X.Chen, F.Yang, C.Trager, K.P.O'Donnell, B.Henderson and M.P.Halsall. Time resolved optical studies of piezoelectric effects in wurtzite strained layer superlattices. Semicon. Sci. Technol. 1991; 5: 997-1000. eScholarID:141171

1990

• P.J.Parbrook, X.Chen, F.Yang, A.R.Barnes, C.Trager, K.P.O'Donnell, B.Henderson, M.P.Halsall, P.J.Wright, B.Cockayne. Photoluminescence of wide-gap II-VI superlattices. J. Cryst. Growth. 1990; 101: 554-558. eScholarID:141173
• M.P.Halsall, J.E.Nicholls, J.J.Davies, B.Cockayne, P.J.Wright. Spectroscopic evidence for piezoelectric effects in wurtzite CdS/CdSe strained layer superlattices. J. Cryst Growth. 1990; 101: 616-619. eScholarID:141170
• M.P.Halsall, J.E.Nicholls, J.J.Davies, P.J.Wright and B.Cockayne. Spectroscopy studies of wurtzite CdS/CdSe superlattices evidence for large piezoelectric effects. Surf. Sci. 1990; 228: 41-44. eScholarID:141172

1989

• M.P.Halsall, J.E.Nicholls, J.J.Davies, B.Cockayne, P.J.Wright and A.G.Cullis. Growth of CdS/CdSe wide-gap superlattices by MOCVD. Superlattices and microstructures. 1989; 5(2): 189-192. eScholarID:141175
• A.G.Cullis, G.M.Williams, B.Cockayne, P.J.Wright, P.W.Smith, P.J.Parbrook and M.P.Halsall. The characterisation of cadmium sulphide and cadmium selenide epitaxial layers grown by MOCVD on gallium arsenide. Microscopy of semiconducting materials 1989, Inst. Phys. Conf. 1989; (100): 217-222. eScholarID:141178

1988

• M.P.Halsall, J.E.Nicholls, J.J.Davies, B.Cockayne, P.J.Wright and A.G.Cullis. CdS/CdSe strained layer superlattices grown by MOCVD. Semic. Sci. Technol. 1988; 3: . eScholarID:141180
• J.J.Davies, J.E.Nicholls, B.Cockayne P.J.Wright and G.J.Russell. Growth and assessment of CdS and CdSe layers produced on GaAs by MOCVD. J. Cryst. Growth. 1988; 91: 135-140. eScholarID:141179