- UCAS course code
- UCAS institution code
MEng Electronic Engineering / Course details
Year of entry: 2022
- View tabs
- View full page
Course unit details:
|Unit level||Level 2|
|Teaching period(s)||Semester 2|
|Offered by||Department of Electrical & Electronic Engineering|
|Available as a free choice unit?||No|
- Integrated circuit process technology. Photolithography, diffusion and ion implantation doping, annealing, dielectric films, thermal growth mechanisms, chemical vapour deposition, polycrystalline silicon and silicon nitride deposition.
- Metal-semiconductor junction characteristics, small signal equivalent circuit and the associated parameters.
- nMOS and pMOS transistors, CMOS technology, the CMOS inverter, planar fabrication of CMOS integrated circuits.
- MOS transistor's gate and junction capacitances.
- Current control in MOS transistors, modelling of the MOS transistor, regions of MOS device operation.
- Small signal equivalent circuits in MOSFETs and their associated parameters.
- State-of-the-art and emerging device architectures, high-k metal gate CMOS process, strained silicon, silicon on insulator, FinFET devices.
|Unit title||Unit code||Requirement type||Description|
|Electronic Circuit Design I||EEEN10029||Pre-Requisite||Compulsory|
This course unit detail provides the framework for delivery in 2020/21 and may be subject to change due to any additional Covid-19 impact. Please see Blackboard / course unit related emails for any further updates.
The course unit aims to:
(1) Introduce the key components of microelectronic devices.
(2) Introduce modern integrated circuit manufacturing techniques.
(3) Emphasise the importance of semiconductor device models.
All of the following Intended Learning Outcomes are developed and assessed. On the successful completion of the course, students will be able to:
Identify the key physical concepts necessary to understand silicon microelectronic components.
Explain metal-semiconductor junctions in terms of vacuum level, electron affinity and work function for Schottky and Ohmic contacts.
Explain the physics behind MOS devices with the aid of energy-band diagrams and space charge distribution.
Calculate the threshold voltage necessary for strong inversion in ideal, as well as non-ideal MOS devices.
Analyse the gradual channel model for understanding current control in MOSFETs and evaluate small signal equivalent circuits with associated parameters.
Design simple MOS logic structures including CMOS inverters.
Describe the fundamental processes involved in silicon integrated circuit manufacture.
Discuss the enormous technical challenges presented by modern and emerging integrated circuit technologies.
- Solid State Electronic Devices, Streetman & Banerjee, PEARSON (7-ed) (Core)
- Microelectronic Circuits, Sedra & Smith, Oxford (7-ed) (Essential)
- The Science and Engineering of Microelectronic Fabrication, S.A. Campbell, Oxford (Essential)
- Semiconductor Devices (Physics and Technology), S.M. Sze (Recommended)
- Silicon VLSI Technology: Fundamentals, Practice, and Modelling, J.D. Plummer, M.D. Deal, P.B. Griffin (Recommended)
- IC Fabrication Technology, G. Bose (Recommended)
|Scheduled activity hours|
|Practical classes & workshops||6|
|Independent study hours|
|Leszek Majewski||Unit coordinator|