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D- centers probed by resonant tunneling spectroscopy
Lok, J G S; Geim, A K; Maan, J C; Marmorkos, I; Peeters, F M; Mori, N; Eaves, L; Foster, T J; Main, P C; Sakai, J W; Henini, M
Physical Review B. 1996;53(15):9554-9557.
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Abstract
A donor-related resonance is observed in double-barrier resonant tunneling devices with Si donors incorporated in the quantum well. In high magnetic fields the resonance becomes dominant over the Is resonance associated with the ground state of a single donor. The bias position of the donor resonance, its magnetic field dependence, and large amplitude indicate unambiguously that the resonance is due to tunneling through the ground state of a shallow donor with two bound electrons (D- level).
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