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The Observation of Hall Plateaus in Diffusive Quasi-2-Dimensional Wires of Submicron Size
Vanderburgt, M; Geim, A K; Vanbockstal, L; Dubonos, S V; Herlach, F
Physica B. 1993;184(1-4):369-373.
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Abstract
Plateaux in the Hall effect have been observed in heavily doped n+-GaAs wires with a mobility as low as 0.15 m2/V s and widths of 200 nm and 800 nm. The observed plateaux are strongly dependent on sample width and electron temperature. The usual vanishing of the longitudinal resistance is not seen. Pronounced plateaux are only observed in the 200 nm sample. An explanation is suggested in terms of conduction along edge states. In this picture the quantized Hall effect is observed if the mean free path of an electron traveling in an edge state, or the backscattering mean free path, well exceeds the Hall probe separation.
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