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Modelling and characterisations of wideband coplanar waveguide MMIC components for nano-scale device applications

Sinulingga, Emerson Pascawira

[Thesis]. Manchester, UK: The University of Manchester; 2014.

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Abstract

Improved characteristics with low loss monolithic microwave integrated circuits (MMICs) components are highly desirable for nano-scale device applications. The conventional microstrip structure is not suitable at high frequency and the alternative is to utilise either a planar or a three-dimensional (3D) multilayer coplanar waveguides (CPWs). By combining MMIC technology with 3D CPW design (which has features such as design flexibility and high integration between passive and active components), optimisation of both current and novel MMIC components can be achieved, greatly improving performance. This research is concerned with the study of microwave/millimetre-wave characteristics and the development of accurate electromagnetic (EM) modelling of planar and multilayer CPW components suitable for monolithic integration with nano scale devices such as self-switching devices (SSDs). The data obtained provides a reliable design with improved wideband characteristics of passive MMIC components leading to novel applications in the millimetre-wave range. The wideband microwave characteristics of the distributed passive MMIC components for integration with nano scale devices have been investigated, by careful study of loss performance of a CPW interdigital structure integrated with SSDs operating up to 110 GHz. Furthermore, the electrical behaviour of various multilayer CPW transmission line designs was observed to provide an insight for microwave designers and engineers into the expected response of such components up to 110 GHz. Accurate EM modelling was carried out, achieving a stable response and a much improved performance compared to the existing modelling techniques. This research demonstrates novel 3D CPW transmission lines (TLs) with minimum parasitic effects at the millimetre-wave range. Gained knowledge is useful in predicting the performance of MMIC components which can be modified or integrated further with nano scale devices. In addition, analysis of an active MMIC component is presented by developing and optimising large-signal model of a GaAs-based pseudomorphic high electron mobility transistor (pHEMT). The results obtained facilitate the development of an accurate model of compact MMIC amplifier circuit suitable for future high yield novel MMICs with improved performance.