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Temperature Dependent Small-Signal Model Parameters Analysis of AlGaAs/InGaAs pHEMTs in Multilayer 3D MMIC Technology

Jimmy P. H. Tan, Junyi Yuan, Ali A. Rezazadeh and Qing Sun

In: , Prof Gilles Dambrine. European Microwave Conference: European Microwave Integrated Circuits (EuMIC); 27 Sep 2010-30 Sep 2010; Paris, France. Paris, Fance: IEEE and European Microwave Association; 2010. p. 174-177.

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Abstract

Development of linear temperature dependent small-signal models for active devices is useful for circuit designers to predict the circuit performance incorporating the devices. It is especially the case for high power devices where tremendous heat is expected to be generated and the underlying physics of the device could be affected. This paper presents, for the first time, an automated direct equivalent circuit parameters (ECPs) extractions, covering temperature range from -25 to 125oC, carried out on AlGaAs/InGaAs pHEMTs before and after fabrication in multilayer CPW MMIC. Comparisons of pre- and post-multilayer-processed pHEMTs characteristics provide insights into the multilayer processing and their optimizations.

Bibliographic metadata

Type of resource:
Content type:
Conference contribution
Type of conference contribution:
Conference paper (reviewed)
Conference contribution title:
Temperature Dependent Small-Signal Model Parameters Analysis of AlGaAs/InGaAs pHEMTs in Multilayer 3D MMIC Technology
Publication date:
2010-09-29
Author(s) list:
Jimmy P. H. Tan, Junyi Yuan, Ali A. Rezazadeh and Qing Sun
Conference title:
European Microwave Integrated Circuits (EuMIC)
Conference venue:
Paris, France
Conference start date:
2010-09-27
Conference end date:
2010-09-30
Publisher:
IEEE and European Microwave Association
Place of publication:
Paris, Fance
Proceedings title:
European Microwave Conference
Proceedings start page:
174
Proceedings end page:
177
Proceedings pagination:
174-177
Contribution total pages:
4
Proceedings editor:
Abstract:
Development of linear temperature dependent small-signal models for active devices is useful for circuit designers to predict the circuit performance incorporating the devices. It is especially the case for high power devices where tremendous heat is expected to be generated and the underlying physics of the device could be affected. This paper presents, for the first time, an automated direct equivalent circuit parameters (ECPs) extractions, covering temperature range from -25 to 125oC, carried out on AlGaAs/InGaAs pHEMTs before and after fabrication in multilayer CPW MMIC. Comparisons of pre- and post-multilayer-processed pHEMTs characteristics provide insights into the multilayer processing and their optimizations.
Keyword(s):
Proceedings' ISBN:
978-2-87487-017-0
Language:
alb
Related website(s):
  • Related website www.eumweek.com
  • Related website http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5613707&isnumber=5613634

Institutional metadata

University researcher(s):
Academic department(s):

Record metadata

Manchester eScholar ID:
uk-ac-man-scw:93339
Created by:
Rezazadeh, Ali
Created:
27th October, 2010, 18:47:39
Last modified:
10th March, 2014, 12:58:20

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