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Influence of electric fields on the smectic layer structure of ferroelectric and antiferroelectric liquid crystal devices.
Watson, S. J.; Matkin, L. S.; Baylis, L. J.; Bowring, N.; Gleeson, H. F.; Hird, M.; Goodby, J
Physical Review E: Statistical, Nonlinear, and Soft Matter Physics. 2002;65:031705/1-031705/9.
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Abstract
The elec.-field-induced structural rearrangement of smectic layers in the antiferroelec. and ferroelec. phases of three different materials is reported. The materials all have high optical tilt angles (around 30 Deg), compared with the steric tilt angles deduced from layer spacing measurements (around 18 Deg). The chevron angles obsd. in devices agree well with values found for the steric tilt angle across the tilted mesophase range. Elec. fields were applied to liq. crystal devices while the smectic layer structures, in both the depth and in the plane of the device, were probed using small angle x-ray scattering. Two sep. aspects of the influence of the field on the layer structure were studied. First, the organization of the smectic layers in the antiferroelec. phase is described before, during, and after the application of an elec. field of sufficient magnitude to induce a chevron to bookshelf transition. Second, the evolution of the field-induced layer structure change was studied as the field was incrementally increased in both the antiferroelec. and ferroelec. phases. The chevron to bookshelf transition has a distinct threshold in the antiferroelec. phase, but shows low or zero threshold behavior in the ferroelec. phase for all the materials studied. [on SciFinder (R)]
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