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Resonant x-ray scattering study of the antiferroelectric and ferrielectric phases in liquid-crystal devices.
Matkin, L. S.; Watson, S. J.; Gleeson, H. F.; Pindak, R.; Pitney, J.; Johnson, P. M.; Huang, C. C.; Barois, P.; Levelut, A.-M.; Srajer, G.; Pollmann, J.; Goodby, J. W.; Hird, M
Physical Review E: Statistical, Nonlinear, and Soft Matter Physics. 2001;64:021705/1-021705/6.
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Abstract
Resonant x-ray scattering has been used to investigate the interlayer ordering of the antiferroelec. and ferrielec. smectic C* subphases in a device geometry. The liq.-cryst. materials studied contain a selenium atom, and the expts. were carried out at the selenium K edge allowing x-ray transmission through glass. The resonant scattering peaks assocd. with the antiferroelec. phase were obsd. in two devices contg. different materials. It was obsd. that the elec.-field-induced antiferroelec. to ferroelec. transition coincides with the chevron to bookshelf transition in one of the devices. Observation of the splitting of the antiferroelec. resonant peaks as a function of applied field also confirmed that no helical unwinding occurs at fields lower than the chevron to bookshelf threshold. Resonant features assocd. with the four-layer ferrielec. liq. crystal phase were obsd. in a device geometry. Monitoring the elec. field dependence of these ferrielec. resonant peaks showed that the chevron to bookshelf transition occurs at a lower applied field than the ferrielec. to ferroelec. switching transition. [on SciFinder (R)]
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