- UCAS course code
- UCAS institution code
MEng Materials Science and Engineering with Corrosion
Year of entry: 2022
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Course unit details:
|Unit level||Level 5|
|Teaching period(s)||Semester 2|
|Offered by||Department of Materials|
|Available as a free choice unit?||No|
This unit looks at the principals involved in the application of functional materials in electronic and optoelectronic devices, from their use in transistors to the energy storage devices that power them
The unit aims to:
- Introduce the fundamentals and concepts of solid state physics required to understand the behaviour and device performance of functional materials.
- Explain mechanisms of electrical and electronic behaviour of semiconductor materials.
- Give the working principles and behaviours of basic semiconductor devices.
- Give an overview of common energy storage and conversion devices, including the underlying principles of their operation.
A greater depth of the learning outcomes will be covered in the following sections:
- Knowledge and understanding
- Intellectual skills
- Practical skills
- Transferable skills and personal qualities
Teaching and learning methods
Lectures, group tutorials (problem sessions), recommended textbooks, web resources, past exam papers, electronic supporting information (Blackboard), peer-assisted study sessions (PASS).
Knowledge and understanding
- Demonstrate an understanding of basic concepts of solid states physics, including: reciprocal space, Brillouin zone, E-k diagram, band structure, effective mass, and Fermi-Dirac equation.
- Demonstrate an understanding of the principles of a doped semiconductor and how these relate to common devices.
- Describe the operation of pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
- Demonstrate an understanding of the meaning of forward and negative biasing and voltage breakdown.
- Demonstrate an understanding of the importance of band structure in controlling the operation of pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
- Describe how electrical biasing is used in pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
- Demonstrate an understanding of how electrical power is produced by a silicon based solar cell.
- Understand the principles of electrochemical storage and understand how these relate to common devices.
- Understand the principles of thermoelectric energy devices
- Demonstrate an understanding of the effect of changing the chemistry and microstructure/architecture of a material on it properties
- Simulate electrical circuit for three typical pn junction diode devices, under both forward bias and reverse bias conditions. Determine the threshold voltage, rectifying behaviour, and the underlying physical mechanism.
- Simulate electrical circuit for two typical bipolar junction transistors in different modes. Determine the transistor characteristics, gain factors, and the underlying physical and device mechanism.
Transferable skills and personal qualities
- Convert word problems into equations and numerical answers.
- Develop techniques for estimating the results from calculations.
- Work effectively in a group to solve problems.
- Compose simple technical reports on laboratory tests.
- Show improved logical reasoning, problem solving and ability in applied mathematics.
|Written assignment (inc essay)||30%|
Written and verbal
- “Solid state electronic devices” Ben G. Streetman author. Sanjay Banerjee, 2016 ; Seventh edition (online access available )
- Materials Science and Engineering - An Introduction”, W. D. Callister, D. G. Rethwisch, Pub. Wiley, 2010.
- “Advanced Batteries: Materials Science Aspects”, R. Huggins, Pub. Springer, 2009
|Scheduled activity hours|
|Independent study hours|
|Coskun Kocabas||Unit coordinator|