- UCAS course code
- F3FA
- UCAS institution code
- M20
Master of Physics (MPhys)
MPhys Physics with Astrophysics
- Typical A-level offer: A*A*A including specific subjects
- Typical contextual A-level offer: A*AA including specific subjects
- Refugee/care-experienced offer: AAA including specific subjects
- Typical International Baccalaureate offer: 38 points overall with 7,7,6 at HL, including specific requirements
Fees and funding
Fees
Tuition fees for home students commencing their studies in September 2025 will be £9,535 per annum (subject to Parliamentary approval). Tuition fees for international students will be £36,500 per annum. For general information please see the undergraduate finance pages.
Policy on additional costs
All students should normally be able to complete their programme of study without incurring additional study costs over and above the tuition fee for that programme. Any unavoidable additional compulsory costs totalling more than 1% of the annual home undergraduate fee per annum, regardless of whether the programme in question is undergraduate or postgraduate taught, will be made clear to you at the point of application. Further information can be found in the University's Policy on additional costs incurred by students on undergraduate and postgraduate taught programmes (PDF document, 91KB).
Scholarships/sponsorships
The University of Manchester is committed to attracting and supporting the very best students. We have a focus on nurturing talent and ability and we want to make sure that you have the opportunity to study here, regardless of your financial circumstances.
For information about scholarships and bursaries please visit our undergraduate student finance pages and our Department funding pages .
Course unit details:
Nanoelectronics and Semiconductors
Unit code | PHYS30752 |
---|---|
Credit rating | 10 |
Unit level | Level 3 |
Teaching period(s) | Semester 2 |
Available as a free choice unit? | No |
Overview
This course unit delves into the fundamentals of semiconductor materials and devices, exploring both their theoretical underpinnings and practical applications. It begins by reviewing key concepts in solid-state physics, including band theory, carrier distributions, and electronic transport mechanisms such as diffusion and drift. The course also covers essential topics like carrier recombination, p-n junctions, and the behaviour of semiconductors under optical excitation. The understanding of these basic phenomena is then applied to the operation of common semiconductor devices such as solar cells and LEDs.
As the course progresses, it dives deeper into advanced topics such as nanoscale electronic transport, including the Landauer-Büttiker formalism, which describes transport in ballistic conductors. It also covers the fabrication and characteristics of nanostructures like quantum wells, quantum dots, and carbon nanotubes. The course concludes with discussions on cutting-edge materials and their applications, such as 2D semiconductors and graphene, in the context of next-generation electronic devices. This comprehensive exploration equips students with a strong foundation in both semiconductor physics and the emerging technologies shaping modern electronics.
Pre/co-requisites
Unit title | Unit code | Requirement type | Description |
---|---|---|---|
Statistical Mechanics | PHYS20352 | Pre-Requisite | Compulsory |
Aims
To explore electronic transport processes, from bulk structures down to low dimensional ones, in relevant materials for nanoelectronics including semiconductors and van der Waals materials. To apply these ideas to practical devices including light-emitting diodes and nanoscale transistors with improved characteristics.
Learning outcomes
On the successful completion of the course, students will be able to:
ILO 1
Explain the concept of conductance, from the familiar Ohm’s law of macroscopic diffusive conductors down to the quantized conductance of mesoscopic ballistic conductors.
ILO 2
Explain the processes of light emission, absorption, and transport in semiconductor materials
ILO 3
Outline the materials used in optoelectronic devices and advanced semiconductor growth techniques, including methods of material doping
ILO 4
Employ physical concepts to describe the behaviour of carriers which are confined in two, one and zero dimensional systems.
ILO 5
Explain the principles behind the realisation and application of electronic structures, including semiconductor (light-emitting) diodes and nanoscale transistors.
Teaching and learning methods
Two one hour, live in-person lectures per week where the core material with examples will be delivered. The recordings of these lectures, as well as the corresponding presentation materials, will be on the course page. The lectures are accompanied by brief summary notes. This is augmented by sets of problems or online quizzes (where the students get automatic feedback) released every two weeks. A Piazza discussion forum is also provided where students can ask questions with answers provided by other students and the unit lead.
Assessment methods
Method | Weight |
---|---|
Written exam | 100% |
Recommended reading
Streetman, B & Banerjee S, Solid State Electronic Devices
Study hours
Scheduled activity hours | |
---|---|
Lectures | 24 |
Independent study hours | |
---|---|
Independent study | 76 |
Teaching staff
Staff member | Role |
---|---|
Ivan Vera Marun | Unit coordinator |