BEng Electrical and Electronic Engineering

This unit will cover the following topics:

• Atomic structure, bonding and types of solids, crystal structure;
• Band theory of solids, effective mass, fermi energy, ionisation potential and work function;
• Electrical and thermal conduction in solids, The drude theory of metals, The Hall effect;
• Semiconductors band gaps, holes and electrons, Energy diagrams in k-space (direct and indirect gaps), electrical conduction in semiconductors;
• Intrinsic/Extrinsic semiconductors (n-type and p-type doping), defects in semiconductors, Temperature & impurity dependence of conductivity (drift mobility);
• Diodes, Ebers-Moll equation and diode resistance, Rectifying circuits;
• Field-Effect Transistors (FETs), properties of FET, FET amplifying circuits;
• Bipolar Junction Transistors (BJTs), properties of BJT, BJT amplifying circuits.

The unit aims to:

• Introduce the basic concepts of material science;
• Describe the different type of atomic bonding in solids and crystal structure; 
• Explain the band theory of solids and its connection to metal and semiconductor electrical and thermal properties; 
• Explain the principles of amplification using electronic components; 
• Describe the characteristics of electronic components and introduce the concept of functional flexibility; 
• Explain the benefits of applying negative feedback in circuits using discrete devices.

On the successful completion of the course, students will be able to:

ILO: Explain fundamentals of atomic bonding and materials science. (Developed and Assessed)

ILO 2: Explain the fundamentals of electrical and thermal conduction in metals. (Developed and Assessed)

ILO 3: Calculate electrical properties of doped and undoped semiconductors from first principles. (Developed and Assessed)

ILO 4: Explain the characteristics of the most fundamental components in electronic circuits:  diodes and transistors. (Developed and Assessed)

ILO 5: Design basic diode circuits for different applications. (Developed and Assessed)

ILO 6: Design basic BJT and FET transistor circuits. (Developed and Assessed)

Pre-recorded videos are provided via CANVAS and are to be watched prior to lectures. These videos are supported by accompanying formative online quizzes.

Large group two-hour lectures are held weekly. Lecture material is provided electronically via CANVAS.

Two three-hour laboratory sessions are conducted in dry teaching lab, with the support of Teaching Assistants, to reinforce the key concepts covered in the course unit.

Bi-weekly small-group tutorials, led by Teaching Assistants, focus on technical discussions related to specific concepts covered in the course unit.

Written exam: 2 hours
Lab-based coursework: 6 hours
Bi-weekly tutorial questions: 3 hours

Written exam: Exam marks provided following Examination Board.
Lab-based coursework: Feedback provided via CANVAS system within three weeks after the submission deadline.
Bi-weekly tutorial questions: Feedback provided via CANVAS system within one week after the submission deadline.

Kasap, S.O. (2018). Principles of Electronic Materials and Devices. 4th edn. McGraw-Hill Education. ISBN: 9780078028182.

Sze, S.M. and Lee, M.K. (2013). Semiconductor Devices: Physics and Technology. 3rd edn. Wiley. ISBN: 9780470537947.