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Year of entry: 2021
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Course unit details:
Semiconductor Quantum Structures
|Unit level||Level 4|
|Teaching period(s)||Semester 2|
|Offered by||Department of Physics & Astronomy|
|Available as a free choice unit?||No|
Semiconductor Quantum Structures
|Unit title||Unit code||Requirement type||Description|
|Quantum Physics and Relativity||PHYS10121||Pre-Requisite||Compulsory|
|Properties of Matter||PHYS10352||Pre-Requisite||Compulsory|
|Fundamentals of Solid State Physics||PHYS20252||Pre-Requisite||Compulsory|
To explore light absorption, emission and transport processes in bulk and low dimensional semiconductor structures. To apply these ideas to practical devices including high-efficiency LEDs and lasers, and transistors with improved characteristics.
1. explain the processes of light emission, absorption and transport in semiconductor materials.
2. outline the materials used in optical and electronic devices and advanced semiconductor growth techniques, including methods of material doping.
3. employ mathematical and physical concepts to describe the behaviour of carriers which are confined in two, one and zero dimensional systems.
4. interpret the consequences of carrier confinement on electronic and optical properties of materials.
5. Explain and compare the physical principles governing the operation of semiconductor LEDs semiconductor lasers and diodes.
6. Explain the principles behind the realisation and application of advanced electronic structures.
1. Review of relevant solid state physics (2 hours)
(Band theory, dispersion relation, density of states)
2. Doping of semiconductors (0.5 hour)
(Donors and acceptors)
3. Carrier distribution in intrinsic and extrinsic semiconductors (1.5 hours)
(Fermi energy, electron and hole distributions in conduction and valence bands)
4. Carrier recombination (3 hours)
(Diffusion, drift, conductivity, Hall Effect)
5. P/N junctions (1 hours)
(Minority carrier injection, bias)
6. Optical properties of semiconductors (2 hours)
(Absorption, emission, Fermi’s Golden Rule, excitons, LEDs)
7. Semiconductor lasers 4 hours)
(Condition for gain, gain spectrum, threshold current, Double Heterostructures)
8. Materials systems (2 hours)
(III- V materials, epitaxial growth techniques, alloys, lattice matching)
9. Semiconductor quantum structures 4 hours)
(Quantum wells, wires and dots, density of states in two, one and zero dimensions)
10. Applications of PN junctions and advanced electronic structures (3 hours)
(Photodiodes, solar cells and high electron mobility transistors)
Feedback will be available on students’ individual written solutions to examples sheets, and model answers will be issued.
Streetman, B & Banerjee S, Solid State Electronic Devices
Davies, J.H. The Physics of Low-Dimensional Semiconductors (Cambridge University Press)
Fox, M. Optical Properties of Solids (Oxford University Press)
Singleton, J. Band Theory and Electronic Properties of Solids (Oxford University Press)
Singh, J. Semiconductor Optoelectronics (McGraw-Hill)
Wilson, J.F. & Hawkes, J. Optoelectronics, an Introduction (Prentice and Hall)
|Scheduled activity hours|
|Assessment written exam||1.5|
|Independent study hours|
|Ivan Vera Marun||Unit coordinator|