Master of Engineering (MEng)

MEng Materials Science and Engineering

Exploiting the full potential of new materials, you can tackle some of greatest challenges facing the planet.

  • Duration: 4 years (or 5 years including a year in industry)
  • Year of entry: 2027
  • UCAS course code: J501 / Institution code: M20
  • Key features:
  • Scholarships available
  • Accredited course

Full entry requirementsHow to apply

Course unit details:
Functional Behaviour

Course unit fact file
Unit code MATS23602
Credit rating 10
Unit level Level 5
Teaching period(s) Semester 2
Offered by Department of Materials
Available as a free choice unit? No

Overview

This unit looks at the principles involved in the application of functional materials in electronic and optoelectronic devices, from their use in transistors to the energy storage devices that power them, including:

  • Introduction of solid state physics: reciprocal space, Brillouin zone, E-k diagram, band structure, effective mass, and Fermi-Dirac equation. (2)
  • Electronic and electrical behaviour of intrinsic semiconductors. (1)
  • Tuning band structure and behaviour of semiconductors through doping. (2)
  • Transport behaviour of semiconductors under non-equilibrium conditions. (2)
  • The principle and device behaviour of pn junction diode. (2)
  • Energy applications through solar cell power generation. (1)
  • The working principle of BJT, MOSFET, FET, and device properties. (5)
  • Optoelectronic applications: LED and laser. (3)
  • The principles of electrochemical storage: fuel cell, super capacitors, lead-acid batteries and lithium ion batteries. Introduction to thermoelectrics (2)

Aims

The unit aims to:

  • Introduce the fundamentals and concepts of solid state physics required to understand the behaviour and device performance of functional materials.
  • Explain mechanisms of electrical and electronic behaviour of semiconductor materials.
  • Give the working principles and behaviours of basic semiconductor devices.
  • Give an overview of common energy storage and conversion devices, including the underlying principles of their operation.

Learning outcomes

A greater depth of the learning outcomes will be covered in the following sections:

  • Knowledge and understanding
  • Intellectual skills
  • Practical skills
  • Transferable skills and personal qualities

Teaching and learning methods

This course will be taught using the following activities and resources: lectures, group tutorials (problem sessions), recommended textbooks, web resources, past exam papers, electronic supporting information (Canvas), peer-assisted study sessions (PASS). 

This unit is delivered using a blended learning approach, which integrates technology and digital media with traditional classroom activities. A variety of learning and teaching processes will be used including: lectures, discussions, group activities and independent study. Canvas will be used to present online study materials, including videos, lecture notes, guided reading, articles and other information. Canvas will also be used for the submission of assessments.

Knowledge and understanding

  • Demonstrate an understanding of basic concepts of solid states physics, including: reciprocal space, Brillouin zone, E-k diagram, band structure, effective mass, and Fermi-Dirac equation.
  • Demonstrate an understanding of the principles of a doped semiconductor and how these relate to common devices.
  • Describe the operation of pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
  • Demonstrate an understanding of the meaning of forward and negative biasing and voltage breakdown.
  • Demonstrate an understanding of the importance of band structure in controlling the operation of pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
  • Describe how electrical biasing is used in pn junctions, diodes, bipolar transistors, MOSFETs, LEDs and lasers.
  • Demonstrate an understanding of how electrical power is produced by a silicon based solar cell.
  • Understand the principles of electrochemical storage and understand how these relate to common devices.
  • Understand the principles of thermoelectric energy devices

Intellectual skills

  • Demonstrate an understanding of the effect of changing the chemistry and microstructure/architecture of a material on it properties

Practical skills

  • Simulate electrical circuit for three typical pn junction diode devices, under both forward bias and reverse bias conditions. Determine the threshold voltage, rectifying behaviour, and the underlying physical mechanism.
  • Simulate electrical circuit for two typical bipolar junction transistors in different modes. Determine the transistor characteristics, gain factors, and the underlying physical and device mechanism.

Transferable skills and personal qualities

  • Convert word problems into equations and numerical answers.
  • Develop techniques for estimating the results from calculations.
  • Work effectively in a group to solve problems.
  • Compose simple technical reports on laboratory tests.
  • Show improved logical reasoning, problem solving and ability in applied mathematics.

Assessment methods

Method Weight
Written exam 70%
Written assignment (inc essay) 30%

Feedback methods

Written and verbal

Recommended reading

The recommended reading for this unit can be found on the online unit reading list.

Study hours

Scheduled activity hours
Lectures 22
Independent study hours
Independent study 78

Teaching staff

Staff member Role
Jessica Boland Unit coordinator

Fees and funding

Fees

Tuition fees for home students will be £10,050 for the 2027/28 academic year. In England and Wales, tuition fees for home undergraduate students are subject to the Government fee cap, which the Government has announced will be £10,050 for the 2027/28 academic year.

Government policy is to increase the fee cap on an annual basis to reflect inflation (i.e. increasing costs), and the tuition fee home students pay in subsequent academic years will reflect any increases in the Government fee cap (which we will communicate to you as soon as we can in advance of the relevant academic year).

Tuition fees for international students will be £41,900 for the 2027/28 academic year. For subsequent academic years, the University reserves the right to increase the tuition fee by up to 7% each year, including to reflect rising costs associated with delivering our education and wider student experience.

For general information please see the undergraduate finance pages.

Policy on additional costs

All students should normally be able to complete their programme of study without incurring additional study costs over and above the tuition fee for that programme. Any unavoidable additional compulsory costs totalling more than 1% of the annual home undergraduate fee per annum, regardless of whether the programme in question is undergraduate or postgraduate taught, will be made clear to you at the point of application. Further information can be found in the University's Policy on additional costs incurred by students on undergraduate and postgraduate taught programmes (PDF document, 91KB).

Scholarships/sponsorships

The University of Manchester is committed to attracting and supporting the very best students. We have a focus on nurturing talent and ability and we want to make sure that you have the opportunity to study here, regardless of your financial circumstances.

For information about scholarships and bursaries please visit our undergraduate student finance pages and our the Department funding pages.

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